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US Patent 10396156 Method for FinFET LDD doping
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Patent
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Date Filed
January 29, 2018
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Date of Patent
August 27, 2019
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Patent Application Number
15882285
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Patent Citations Received
US Patent 11532522 Source/drain EPI structure for improving contact quality
US Patent 11355587 Source/drain EPI structure for device boost
Patent Inventor Names
Cheng-Yi Peng
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Wei-Yang Lee
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Ya-Yun Cheng
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Yen-Ming Chen
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Chun Hsiung Tsai
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Jian-Hao Chen
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Kuo-Feng Yu
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Shahaji B. More
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10396156
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Patent Primary Examiner
Hoang-Quan T Ho
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