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US Patent 10396206 Gate cut method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
July 7, 2017
Date of Patent
August 27, 2019
Patent Application Number
15643940
Patent Citations
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US Patent 10229854 FinFET gate cut after dummy gate removal
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US Patent 10090169 Methods of forming integrated circuit structures including opening filled with insulator in metal gate
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US Patent 10236213 Gate cut structure with liner spacer and related method
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US Patent 10056469 Gate cut integration and related device
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US Patent 10083874 Gate cut method
Patent Citations Received
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US Patent 12107014 Nanosheet transistors with self-aligned gate cut
0
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US Patent 11557660 Method and device for forming cut-metal-gate feature
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US Patent 10950713 Method and device for forming cut-metal-gate feature
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10396206
Patent Primary Examiner
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Sophia T Nguyen

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