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US Patent 10438797 Method of quasi atomic layer etching

Patent 10438797 was granted and assigned to Tokyo Electron on October, 2019 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Tokyo Electron
Tokyo Electron
Date Filed
September 6, 2017
Date of Patent
October 8, 2019
Patent Application Number
15697168
Patent Citations Received
‌
US Patent 11508554 High voltage filter assembly
‌
US Patent 12111341 In-situ electric field detection method and apparatus
0
‌
US Patent 11462389 Pulsed-voltage hardware assembly for use in a plasma processing system
‌
US Patent 11476090 Voltage pulse time-domain multiplexing
‌
US Patent 11476145 Automatic ESC bias compensation when using pulsed DC bias
‌
US Patent 11495470 Method of enhancing etching selectivity using a pulsed plasma
‌
US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
0
‌
US Patent 11462388 Plasma processing assembly using pulsed-voltage and radio-frequency power
‌
US Patent 11569066 Pulsed voltage source for plasma processing applications
‌
US Patent 11284500 Method of controlling ion energy distribution using a pulse generator
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10438797
Patent Primary Examiner
‌
Lan Vinh

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