Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 15, 2019
Patent Application Number
13762176
Date Filed
February 7, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.
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