Patent 10443129 was granted and assigned to Applied Materials on October, 2019 by the United States Patent and Trademark Office.
An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.