Patent attributes
In accordance with at least one embodiment, an ESD device comprises: a semiconductor; a pad; a ground rail; a p-well formed in the semiconductor; a first p-type region formed in the p-well and electrically coupled to the ground rail; a first n-type region formed in the p-well and electrically coupled to the pad; a second n-type region formed in the p-well and electrically coupled to the ground rail; an n-well formed in the semiconductor; a first n-type region formed in the n-well; a first p-type region formed in the n-well and electrically coupled to the pad; and a second p-type region formed in the n-well and electrically coupled to the first n-type region formed in the n-well.