Patent 10446537 was granted and assigned to Texas Instruments on October, 2019 by the United States Patent and Trademark Office.
In accordance with at least one embodiment, an ESD device comprises: a semiconductor; a pad; a ground rail; a p-well formed in the semiconductor; a first p-type region formed in the p-well and electrically coupled to the ground rail; a first n-type region formed in the p-well and electrically coupled to the pad; a second n-type region formed in the p-well and electrically coupled to the ground rail; an n-well formed in the semiconductor; a first n-type region formed in the n-well; a first p-type region formed in the n-well and electrically coupled to the pad; and a second p-type region formed in the n-well and electrically coupled to the first n-type region formed in the n-well.