Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 5, 2019
Patent Application Number
15096864
Date Filed
April 12, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
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