US Patent 10468455 Simplified double magnetic tunnel junctions
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Patent abstract
Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
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Patent Jurisdiction
Patent Number
104684550
Date of Patent
November 5, 2019
0Patent Application Number
150968640
Date Filed
April 12, 2016
0Patent Citations Received
Patent Primary Examiner
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Infobox
Is a
Patent Jurisdiction
Patent Number
104684550
Date of Patent
November 5, 2019
0Patent Application Number
150968640
Date Filed
April 12, 2016
0Patent Primary Examiner
Edits on 30 Jan, 2022
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US Patent 10468455 Simplified double magnetic tunnel junctions
Infobox
Is a
Patent jurisdiction
Patent number
10468455
Date of patent
November 5, 2019
Patent application number
15096864
Date Filed
April 12, 2016
Patent primary examiner
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