US Patent 10497816 Semiconductor device

The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of SiC, a Schottky electrode formed to come into contact with at least a portion of a surface of the semiconductor layer, a field region surrounding the Schottky electrode, an annular trench formed on the field region and surrounding the Schottky electrode and a second conductivity type layer formed under a portion of the Schottky electrode outside at least the portion of the surface of the semiconductor layer.