US Patent 10504793 Hybrid-channel nano-sheet FETs

Semiconductor devices and methods of forming a first layer cap at ends of layers of first channel material in a stack of alternating layers of first channel material and second channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in a first device region. The second layer caps are etched away in a second device region. First source/drain regions are grown in the first device region from exposed ends of the layers of the first channel material. Second source/drain regions are grown in the second device region from exposed ends of the layers of the second channel material.