Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Peng Xu0
Zhenxing Bi0
Wenyu Xu0
Kangguo Cheng0
Date of Patent
March 15, 2022
0Patent Application Number
166813470
Date Filed
November 12, 2019
0Patent Citations
Patent Primary Examiner
Semiconductor devices and methods of forming a first layer cap at ends of layers of first channel material in a stack of alternating layers of first channel material and second channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in a first device region. The second layer caps are etched away in a second device region.
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