Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sheng-Liang Pan0
Syun-Ming Jang0
Chia-Yang Hung0
Jack Kuo-Ping Kuo0
Jyu-Horng Shieh0
Shu-Huei Suen0
Date of Patent
December 17, 2019
0Patent Application Number
159931780
Date Filed
May 30, 2018
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.
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