US Patent 10510553 Dry ashing by secondary excitation
Patent 10510553 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2019 by the United States Patent and Trademark Office.
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Patent Citations Received
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Patent abstract
An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.
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Patent Inventor Names
Chia-Yang Hung0
Jack Kuo-Ping Kuo0
Jyu-Horng Shieh0
Sheng-Liang Pan0
Shu-Huei Suen0
Syun-Ming Jang0
Edits on 24 Sep, 2022
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
105105530
Date of Patent
December 17, 2019
0Patent Application Number
159931780
Date Filed
May 30, 2018
0Patent Primary Examiner
Edits on 31 Jan, 2022
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US Patent 10510553 Dry ashing by secondary excitation
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10510553
Date of patent
December 17, 2019
Patent application number
15993178
Date Filed
May 30, 2018
Patent primary examiner
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