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US Patent 10510836 Gate trench device with oxygen inserted si-layers
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Patent
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Date Filed
August 8, 2018
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Date of Patent
December 17, 2019
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Patent Application Number
16058544
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Patent Citations Received
US Patent 12132051 Method of manufacturing semiconductor devices and semiconductor devices
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US Patent 11545545 Superjunction device with oxygen inserted Si-layers
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US Patent 10861966 Vertical trench power devices with oxygen inserted Si-layers
US Patent 10868172 Vertical power devices with oxygen inserted Si-layers
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US Patent 11031466 Method of forming oxygen inserted Si-layers in power semiconductor devices
US Patent 11804531 Thin film transfer using substrate with etch stop layer and diffusion barrier layer
US Patent 11908904 Planar gate semiconductor device with oxygen-doped Si-layers
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US Patent 11955485 Method of manufacturing semiconductor devices and semiconductor devices
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Patent Inventor Names
Andreas Meiser
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Robert Haase
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Sylvain Leomant
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Martin Poelzl
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Maximilian Roesch
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10510836
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Patent Primary Examiner
Hung K Vu
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