Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chandrashekhar Prakash Savant0
Shahaji B. More0
Date of Patent
October 29, 2024
0Patent Application Number
178752770
Date Filed
July 27, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
A gate structure of a field effect transistor includes a first gate dielectric layer, a second gate dielectric layer, and one or more conductive layers disposed over the first gate dielectric layer and the second gate dielectric layer. The first gate dielectric layer is separated from the second gate dielectric layer by a gap filled with a diffusion blocking layer.
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