Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shahaji B. More0
Chandrashekhar Prakash Savant0
Date of Patent
January 17, 2023
0Patent Application Number
171040190
Date Filed
November 25, 2020
0Patent Citations Received
Patent Primary Examiner
A gate structure of a field effect transistor includes a first gate dielectric layer, a second gate dielectric layer, and one or more conductive layers disposed over the first gate dielectric layer and the second gate dielectric layer. The first gate dielectric layer is separated from the second gate dielectric layer by a gap filled with a diffusion blocking layer.
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