Patent attributes
The present disclosure relates to a resistive random access memory (RRAM) device. In some embodiments, the RRAM device has a bottom electrode disposed over a lower interconnect layer surrounded by an inter-level dielectric (ILD) layer. A dielectric data storage layer having a variable resistance is located above the bottom electrode, and a multi-layer top electrode is disposed over the dielectric data storage layer. The multi-layer top electrode has conductive top electrode layers separated by an oxygen barrier structure configured to mitigate movement of oxygen within the multi-layer top electrode. By including an oxygen barrier structure within the top electrode, the reliability of the RRAM device is improved since oxygen is kept close to the dielectric data storage layer.
