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US Patent 10516106 Electrode structure to improve RRAM performance
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Patent
Date Filed
March 29, 2018
Date of Patent
December 24, 2019
Patent Application Number
15939832
Patent Citations
US Patent 10109793 Bottom electrode for RRAM structure
Patent Citations Received
US Patent 11309491 Data storage structure for improving memory cell reliability
US Patent 10720580 RRAM device and method of fabrication thereof
US Patent 11038108 Step height mitigation in resistive random access memory structures
US Patent 11678592 Step height mitigation in resistive random access memory structures
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10516106
Patent Primary Examiner
Cuong Q Nguyen
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