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US Patent 10522344 Integrated circuits with doped gate dielectrics
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Patent
Date Filed
November 6, 2017
Date of Patent
December 31, 2019
Patent Application Number
15804575
Patent Citations Received
US Patent 11791217 Gate structure and method with dielectric gates and gate-cut features
US Patent 10998237 Gate structure and method with dielectric gates and gate-cut features
US Patent 11037831 Gate structure and method
US Patent 11605537 Integrated circuits with doped gate dielectrics
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10522344
Patent Primary Examiner
Brian Turner
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