Patent attributes
One illustrative embodiment disclosed herein relates to a semiconductor device that includes, among other things, a semiconductor substrate including a base semiconductor layer, an active semiconductor layer, and a buried insulating layer positioned between the base semiconductor layer and the active semiconductor layer. The device further includes a set of functional gate structures including at least one functional gate structure formed above the active semiconductor layer, a first source/drain region positioned in the active semiconductor layer adjacent a first functional gate structure in the set, a first auxiliary gate structure positioned adjacent the first source/drain region, and a discharge device coupled to the base semiconductor layer and the first auxiliary gate structure.
