US Patent 10529913 Techniques for MRAM MTJ top electrode connection

Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell disposed on a substrate, the MRAM cell comprises a magnetic tunnel junction (MTJ) disposed between a lower electrode and an upper electrode. A sidewall spacer arranged along opposite sidewalls of the MRAM cell. An upper interconnect wire directly contacting an upper surface of the upper electrode along an interface continuously extending from a first outer edge of the sidewall spacer to a second outer edge of the sidewall spacer.