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US Patent 10535793 Group III nitride heterostructure for optoelectronic device

Patent 10535793 was granted and assigned to Sensor Electronic Technology on January, 2020 by the United States Patent and Trademark Office.

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Patent abstract

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

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