US Patent 10535793 Group III nitride heterostructure for optoelectronic device
Patent 10535793 was granted and assigned to Sensor Electronic Technology on January, 2020 by the United States Patent and Trademark Office.
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Patent abstract
Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
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Patent Inventor Names
Alexander Dobrinsky0
Jinwei Yang0
Maxim S. Shatalov0
Michael Shur0
Rakesh Jain0
Remigijus Gaska0
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US Patent 10535793 Group III nitride heterostructure for optoelectronic device
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Patent jurisdiction
Patent number
10535793
Date of patent
January 14, 2020
Patent application number
15602677
Date Filed
May 23, 2017
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