US Patent 10553675 Isolation of semiconductor device with buried cavity
Patent 10553675 was granted and assigned to Infineon Technologies on February, 2020 by the United States Patent and Trademark Office.
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Patent abstract
In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.
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Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
105536750
Date of Patent
February 4, 2020
0Patent Application Number
157856270
Date Filed
October 17, 2017
0Patent Citations Received
Patent Primary Examiner
Edits on 26 Mar, 2023
Golden AI
Infobox
Patent Citations Received
Edits on 22 Sep, 2022
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Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
105536750
Date of Patent
February 4, 2020
0Patent Application Number
157856270
Date Filed
October 17, 2017
0Patent Citations Received
Patent Primary Examiner
Edits on 10 Aug, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent citations received
Edits on 1 Feb, 2022
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Infobox (+9 properties)
US Patent 10553675 Isolation of semiconductor device with buried cavity
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10553675
Date of patent
February 4, 2020
Patent application number
15785627
Date Filed
October 17, 2017
Patent primary examiner
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