Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takashi Ando0
Choonghyun Lee0
Jingyun Zhang0
Date of Patent
February 18, 2020
0Patent Application Number
159474110
Date Filed
April 6, 2018
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a first gate-all-around field-effect transistor (GAA FET) device including a first gate stack having first channels, interfacial layers formed around the first channels, and dielectric material including first and second portions having respective thicknesses formed on the first interfacial layers. The semiconductor device further includes a second GAA FET device including a second gate stack having second channels, the interfacial layers formed around the second channels, and the dielectric material formed on the second interfacial layers. A threshold voltage (Vt) shift associated with the semiconductor device is achieved based on a thickness of the first portion of the dielectric material.
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