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US Patent 10734286 Multiple dielectrics for gate-all-around transistors

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Date of Patent

August 4, 2020

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Patent Application Number

162701740

Date Filed

February 7, 2019

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Patent Citations

US Patent 10475902 Spacers for nanowire-based integrated circuit device and method of fabricating same

US Patent 10566245 Method of fabricating gate all around semiconductor device

US Patent 10566435 Gate stack quality for gate-all-around field-effect transistors

US Patent 10566248 Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar

US Patent 10573521 Gate metal patterning to avoid gate stack attack due to excessive wet etching

US Patent 10103065 Gate metal patterning for tight pitch applications

US Patent 10410933 Replacement metal gate patterning for nanosheet devices

Patent Citations Received

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US Patent 11664656 ESD protection for integrated circuit devices

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US Patent 11302692 Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same

US Patent 11368016 ESD protection for integrated circuit devices

US Patent 11056396 Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same

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