Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Theodore E. Fong0
Michael I. Current0
Date of Patent
February 25, 2020
0Patent Application Number
160577470
Date Filed
August 7, 2018
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.