Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seungha Oh0
Weonhong Kim0
Hoonjoo Na0
Date of Patent
January 10, 2023
0Patent Application Number
171608740
Date Filed
January 28, 2021
0Patent Citations
Patent Primary Examiner
A three-dimensional semiconductor device includes a first substrate; a plurality of first transistors on the first substrate; a second substrate on the plurality of first transistors; a plurality of second transistors on the second substrate; and an interconnection portion electrically connecting the plurality of first transistors and the plurality of second transistors. Each of the plurality of first transistors includes a first gate insulating film on the first substrate and having a first hydrogen content. Each of the plurality of second transistors includes a second gate insulating film on the second substrate and having a second hydrogen content. The second hydrogen content is greater than the first hydrogen content.
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