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US Patent 10573742 Oxygen inserted Si-layers in vertical trench power devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 8, 2018
Date of Patent
February 25, 2020
Patent Application Number
16058655
Patent Citations Received
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US Patent 11908904 Planar gate semiconductor device with oxygen-doped Si-layers
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US Patent 11545545 Superjunction device with oxygen inserted Si-layers
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US Patent 10741638 Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
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US Patent 10790353 Semiconductor device with superjunction and oxygen inserted Si-layers
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US Patent 10861966 Vertical trench power devices with oxygen inserted Si-layers
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US Patent 10868172 Vertical power devices with oxygen inserted Si-layers
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US Patent 11031466 Method of forming oxygen inserted Si-layers in power semiconductor devices
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US Patent 11804531 Thin film transfer using substrate with etch stop layer and diffusion barrier layer
Patent Inventor Names
Thomas Feil
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Bernhard Goller
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Martin Poelzl
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Ravi Keshav Joshi
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Robert Haase
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Sylvain Leomant
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Maximilian Roesch
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10573742
Patent Primary Examiner
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Monica D Harrison

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