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US Patent 10685888 Low resistance source-drain contacts using high temperature silicides

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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=106858880
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
106858880
Date of Patent
June 16, 2020
0
Patent Application Number
153344790
Date Filed
October 26, 2016
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=106858880
Patent Citations
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US Patent 10011920 Low-temperature selective epitaxial growth of silicon for device integration
0
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US Patent 10032889 Self-aligned passivation of active regions
0
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US Patent 10032897 Single electron transistor with self-aligned Coulomb blockade
0
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US Patent 10090392 Semiconductor device and manufacturing method thereof
0
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US Patent 10109507 Fluorine contamination control in semiconductor manufacturing process
0
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US Patent 10157995 Integrating junction formation of transistors with contact formation
0
Patent Primary Examiner
‌
Jay C Kim
0
"update citations for inverse infoboxes"
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edited on 25 Sep, 2022
Edits on 8 Jun, 2022
"Entity importer update"
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edited on 8 Jun, 2022
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Infobox (+1 properties)
Infobox
Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10685888
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 US Patent 10685888 Low resistance source-drain contacts using high temperature silicides

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10685888
Date of patent
June 16, 2020
Patent application number
15334479
Date Filed
October 26, 2016
Patent citations
‌
US Patent 10011920 Low-temperature selective epitaxial growth of silicon for device integration
‌
US Patent 10032889 Self-aligned passivation of active regions
‌
US Patent 10032897 Single electron transistor with self-aligned Coulomb blockade
‌
US Patent 10090392 Semiconductor device and manufacturing method thereof
‌
US Patent 10109507 Fluorine contamination control in semiconductor manufacturing process
‌
US Patent 10157995 Integrating junction formation of transistors with contact formation
Patent primary examiner
‌
Jay C Kim

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