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US Patent 10720503 Method for manufacturing semiconductor device
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Edits on 5 Jul, 2023
"update inverses"
Golden AI
edited on 5 Jul, 2023
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Infobox
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Patent Citations Received
US Patent 11694901 Field-effect transistor and method for manufacturing the same
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Edits on 26 May, 2023
"Remove website redirecting to Patent Public Search front page"
Golden AI
edited on 26 May, 2023
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Infobox
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10720503
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Edits on 3 Apr, 2023
"Entity importer update"
Golden AI
edited on 3 Apr, 2023
Infobox
Is a
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10720503
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Date of Patent
July 21, 2020
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Patent Application Number
16103704
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Date Filed
August 14, 2018
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10720503
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Patent Citations
US Patent 10056289 Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
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US Patent 10074732 Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages
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US Patent 10103238 Nanosheet field-effect transistor with full dielectric isolation
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Patent Primary Examiner
Feifei Yeung Lopez
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Edits on 25 Mar, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 25 Mar, 2023
Infobox
Patent Citations
US Patent 10056289 Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
0
Edits on 8 Jun, 2022
"Entity importer update"
Golden AI
edited on 8 Jun, 2022
Edits made to:
Infobox
(
+1
properties)
Infobox
Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10720503
Edits on 5 Feb, 2022
"Created via: Entity Importer"
Golden AI
created this topic on 5 Feb, 2022
Edits made to:
Infobox
(
+10
properties)
US Patent 10720503 Method for manufacturing semiconductor device
Infobox
Is a
Patent
Patent jurisdiction
United States Patent and Trademark Office
Patent number
10720503
Date of patent
July 21, 2020
Patent application number
16103704
Date Filed
August 14, 2018
Patent citations
US Patent 10056289 Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
US Patent 10074732 Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages
US Patent 10103238 Nanosheet field-effect transistor with full dielectric isolation
Patent primary examiner
Feifei Yeung Lopez
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