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US Patent 10720503 Method for manufacturing semiconductor device
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Patent
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Date Filed
August 14, 2018
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Date of Patent
July 21, 2020
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Patent Application Number
16103704
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Patent Citations
US Patent 10103238 Nanosheet field-effect transistor with full dielectric isolation
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US Patent 10074732 Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages
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US Patent 10056289 Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
Patent Citations Received
US Patent 11694901 Field-effect transistor and method for manufacturing the same
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10720503
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Patent Primary Examiner
Feifei Yeung Lopez
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