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US Patent 10749103 Dry plasma etch method to pattern MRAM stack
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Patent
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Current Assignee
Lam Research
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Date Filed
June 21, 2019
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Date of Patent
August 18, 2020
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Patent Applicant
Lam Research
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Patent Application Number
16449141
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Patent Citations
US Patent 10186426 Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
US Patent 10096487 Atomic layer etching of tungsten and other metals
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US Patent 10374144 Dry plasma etch method to pattern MRAM stack
Patent Citations Received
US Patent 11450513 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US Patent 10998187 Selective deposition with atomic layer etch reset
US Patent 11069535 Atomic layer etch of tungsten for enhanced tungsten deposition fill
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10749103
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Patent Primary Examiner
Allan W. Olsen
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