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US Patent 10763177 I/O device for gate-all-around transistors
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Patent
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Date Filed
March 1, 2019
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Date of Patent
September 1, 2020
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Patent Application Number
16290606
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Patent Citations
US Patent 10403738 Techniques for improved spacer in nanosheet device
US Patent 10553679 Formation of self-limited inner spacer for gate-all-around nanosheet FET
US Patent 10446664 Inner spacer formation and contact resistance reduction in nanosheet transistors
US Patent 10615258 Nanosheet semiconductor structure with inner spacer formed by oxidation
US Patent 10243060 Uniform low-k inner spacer module in gate-all-around (GAA) transistors
US Patent 10332962 Nanosheet semiconductor structure with inner spacer formed by oxidation
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Patent Citations Received
US Patent 12062695 Transistor gate structures and methods of forming the same
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US Patent 11410889 Semiconductor device and manufacturing method thereof
US Patent 11411124 Semiconductor devices
US Patent 10923602 Semiconductor devices
US Patent 11056396 Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same
US Patent 11637180 Transistor gate structures and methods of forming the same
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US Patent 11302692 Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
US Patent 11784054 Etching method and substrate processing system
US Patent 11784260 Semiconductor devices
US Patent 11791216 Nanostructure field-effect transistor device and method of forming
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10763177
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Patent Primary Examiner
Laura M Menz
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