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US Patent 10851456 Deposition of metal borides
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Patent
Date Filed
January 25, 2019
Date of Patent
December 1, 2020
Patent Application Number
16258187
Patent Citations
US Patent 10340125 Pulsed remote plasma method and system
US Patent 10468251 Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US Patent 10483154 Front-end-of-line device structure and method of forming such a front-end-of-line device structure
US Patent 10529554 Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US Patent 10032628 Source/drain performance through conformal solid state doping
US Patent 10018920 Lithography patterning with a gas phase resist
US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
US Patent 10032792 Semiconductor device and manufacturing method thereof
US Patent 10043661 Method for protecting layer by forming hydrocarbon-based extremely thin film
US Patent 10047435 Dual selective deposition
•••
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10851456
Patent Primary Examiner
Bret P Chen
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