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US Patent 10861966 Vertical trench power devices with oxygen inserted Si-layers
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Patent
Date Filed
December 18, 2019
Date of Patent
December 8, 2020
Patent Application Number
16719070
Patent Citations
US Patent 10573742 Oxygen inserted Si-layers in vertical trench power devices
US Patent 10510836 Gate trench device with oxygen inserted si-layers
Patent Citations Received
US Patent 12062717 Structure and method for manufacturing a trench power MOSFET
0
US Patent 11527633 Trench gate device and method for making the same
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10861966
Patent Primary Examiner
Monica D Harrison
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