Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hyun Kwang Shin0
Date of Patent
August 13, 2024
0Patent Application Number
175188870
Date Filed
November 4, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
A trench power MOSFET includes a body region disposed on a semiconductor substrate, a trench passing through the body region, an top electrode and a bottom electrode spaced apart from each other in a vertical direction in the trench, an inter-electrode dielectric layer disposed between the top electrode and the bottom electrode, and a plurality of dielectric layers, disposed between a sidewall of the trench and the bottom electrode, comprising a first oxide layer disposed on the sidewall of the trench, an barrier layer disposed on the first oxide layer, and a second oxide layer disposed on the barrier layer. The barrier layer is formed of a material different from materials of the first and second oxide layers.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.