Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Erwin A. Hijzen0
Michael A. A. In't Zandt0
Raymond J. E. Hueting0
Date of Patent
April 3, 2007
0Patent Application Number
105382120
Date Filed
December 8, 2003
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of making a trench MOSFET includes forming a nitride liner 50 on the sidewalls 28 of a trench and a plug of doped polysilicon 26 at the bottom of a trench. The plug of polysilicon 26 may then be oxidised to form a thick oxide plug 30 at the bottom of the trench whilst the nitride liner 50 protects the sidewalls 28 from oxidation. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.
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