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US Patent 10872965 Method of forming semiconductor structure

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Edits on 25 May, 2023
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1087296500
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https://pdfpiw.uspto.gov/.piw?Docid=10872965
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 US Patent 10872965 Method of forming semiconductor structure

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10872965
Date of patent
December 22, 2020
Patent application number
16914940
Date Filed
June 29, 2020
Patent citations
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US Patent 10026824 Air-gap gate sidewall spacer and method
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US Patent 10062764 Semiconductor device having void between gate electrode and sidewall spacer and manufacturing method thereof
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US Patent 10367076 Air gap spacer with controlled air gap height
Patent primary examiner
‌
Evren Seven

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