Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Xin Miao0
Chen Zhang0
Wenyu Xu0
Date of Patent
July 30, 2019
0Patent Application Number
158849340
Date Filed
January 31, 2018
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET and method for fabricating an air gap spacer in a FinFET is disclosed. The FinFET includes a sidewall spacer between a gate material and an interlayer dielectric material. The sidewall spacer includes a lower portion that extends fully between the gate and the interlayer dielectric material and an upper portion that includes an airgap. The sidewall spacer is fabricated by depositing a sacrificial gate structure in a gate region having an upper sacrificial layer and a lower sacrificial layer, and removing the upper sacrificial layer to expose a sidewall spacer region. Airgap spacer material is deposited in the exposed sidewall spacer region to form an upper portion of the sidewall spacer having the air gap.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.