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US Patent 10879308 Stacked nanosheet 4T2R unit cell for neuromorphic computing

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Date of Patent

December 29, 2020

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Patent Application Number

165765510

Date Filed

September 19, 2019

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Patent Citations

US Patent 10297749 High density resistive random access memory integrated on complementary metal oxide semiconductor

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US Patent 10734447 Field-effect transistor unit cells for neural networks with differential weights

US Patent 10127494 Neural network crossbar stack

US Patent 10504963 RRAM memory cell with multiple filaments

Patent Citations Received

US Patent 12119264 Non-step nanosheet structure for stacked field-effect transistors

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US Patent 11869987 Gate-all-around integrated circuit structures including varactors

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US Patent 11916073 Stacked complementary field effect transistors

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US Patent 12080714 Buried local interconnect between complementary field-effect transistor cells

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US Patent 11769820 Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region

US Patent 11404416 Low resistance fill metal layer material as stressor in metal gates

US Patent 11417781 Gate-all-around integrated circuit structures including varactors

US Patent 11843001 Devices including stacked nanosheet transistors

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Patent Primary Examiner

Mushfique Siddique

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