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US Patent 10886459 Multi-resistance MRAM
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Patent
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Date Filed
June 24, 2019
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Date of Patent
January 5, 2021
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Patent Application Number
16449895
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Patent Citations
US Patent 10192789 Methods of fabricating dual threshold voltage devices
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US Patent 10528643 Vector-matrix multiplication using non-volatile memory cells
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US Patent 10026478 Biasing scheme for multi-layer cross-point ReRAM
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US Patent 10229723 Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten
Patent Inventor Names
Young-Suk Choi
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Won Ho Choi
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10886459
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Patent Primary Examiner
Hien N Nguyen
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