Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 12, 2021
Patent Application Number
16914483
Date Filed
June 29, 2020
Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate having a n-type work function metal layer or a p-type work function metal layer.
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