Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu-Ren Wang0
Po-Jen Chuang0
Wen-An Liang0
Yuan-Yu Chung0
Chia-Ming Kuo0
Ching-Ling Lin0
Fu-Jung Chuang0
Guan-Wei Huang0
...
Date of Patent
November 12, 2019
0Patent Application Number
160308710
Date Filed
July 10, 2018
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to forma first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.
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