Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chia-Ming Kuo
Fu-Jung Chuang
Po-Jen Chuang
Chi-Mao Hsu
Chun-Hsien Lin
Guan-Wei Huang
Yu-Ren Wang
Date of Patent
October 17, 2023
Patent Application Number
17981499
Date Filed
November 7, 2022
Patent Citations
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.
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