Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
Eun-sun Noh0
Joon-myoung Lee0
Ju-hyun Kim0
Woo-chang Lim0
Date of Patent
January 12, 2021
0Patent Application Number
165125030
Date Filed
July 16, 2019
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A magnetic memory device includes a buffer layer on a substrate, a magnetic tunnel junction structure including a fixed layer structure, a tunnel barrier, and a free layer that are sequentially arranged on the buffer layer, and a spin-orbit torque (SOT) structure on the magnetic tunnel junction structure and including a topological insulator material, wherein the free layer includes a Heusler material.
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