Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Pouya Hashemi0
Guohan Hu0
Saba Zare0
Jonathan Zanhong Sun0
Date of Patent
April 30, 2024
0Patent Application Number
175266460
Date Filed
November 15, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.
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