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US Patent 10896956 Field effect transistor with reduced contact resistance
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Patent
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Date Filed
December 22, 2017
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Date of Patent
January 19, 2021
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Patent Application Number
15852648
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Patent Citations
US Patent 10008583 Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same
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Patent Citations Received
US Patent 11942416 Sideways vias in isolation areas to contact interior layers in stacked devices
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US Patent 11894423 Contact resistance reduction in nanosheet device structure
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Patent Inventor Names
Remi Coquand
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Shay Reboh
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10896956
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Patent Primary Examiner
Mohammed Shamsuzzaman
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