Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chiyu Zhu0
David de Roest0
Delphine Longrie0
Han Wang0
Harald Profijt0
Jan Willem Maes0
Julian Hsieh0
Krzysztof Kachel0
...
Date of Patent
January 26, 2021
0Patent Application Number
167730640
Date Filed
January 27, 2020
0Patent Citations
...
Patent Citations Received
Patent Primary Examiner
Patent abstract
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
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